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Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5991110/ https://ncbi.nlm.nih.gov/pubmed/29882031 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2587-1 |
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