Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LE...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Son, Kwang Jeong, Kim, Tae Kyoung, Cha, Yu‐Jung, Oh, Seung Kyu, You, Shin‐Jae, Ryou, Jae‐Hyun, Kwak, Joon Seop
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2017
Assuntos:
Full Papers
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5827458/
https://ncbi.nlm.nih.gov/pubmed/29619312
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201700637
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