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Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LE...
Shranjeno v:
| izdano v: | Adv Sci (Weinh) |
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| Main Authors: | , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
John Wiley and Sons Inc.
2017
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5827458/ https://ncbi.nlm.nih.gov/pubmed/29619312 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201700637 |
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