Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors

The band gap properties of amorphous SiInZnO (a-SIZO) thin-film transistors (TFTs) with different Si concentrations have been studied. The electronic structures of the films, engineered by controlling the Si content, have been investigated through the changes of the band gap and band edge states. Ca...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Sci Rep
Prif Awduron: Choi, Jun Young, Heo, Keun, Cho, Kyung-Sang, Hwang, Sung Woo, Chung, JaeGwan, Kim, Sangsig, Lee, Byeong Hyeon, Lee, Sang Yeol
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group UK 2017
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC5684203/
https://ncbi.nlm.nih.gov/pubmed/29133806
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-15331-7
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