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Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms c...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5095643/ https://ncbi.nlm.nih.gov/pubmed/27812035 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep36504 |
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