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Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dep...
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| 發表在: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group UK
2019
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6351611/ https://ncbi.nlm.nih.gov/pubmed/30696893 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37530-6 |
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