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Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dep...
Gorde:
| Argitaratua izan da: | Sci Rep |
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| Egile Nagusiak: | , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group UK
2019
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6351611/ https://ncbi.nlm.nih.gov/pubmed/30696893 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37530-6 |
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