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Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dep...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Lee, Byeong Hyeon, Sohn, Ahrum, Kim, Sangsig, Lee, Sang Yeol
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2019
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC6351611/
https://ncbi.nlm.nih.gov/pubmed/30696893
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37530-6
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