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Investigation on energy bandgap states of amorphous SiZnSnO thin films
The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (O(p)). The systematic change in O(p) during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As O(p) i...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6917747/ https://ncbi.nlm.nih.gov/pubmed/31848440 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55807-2 |
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