Investigation on energy bandgap states of amorphous SiZnSnO thin films

The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (O(p)). The systematic change in O(p) during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As O(p) i...

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Vydáno v:Sci Rep
Hlavní autoři: Lee, Byeong Hyeon, Cho, Kyung-Sang, Lee, Doo-Yong, Sohn, Ahrum, Lee, Ji Ye, Choo, Hyuck, Park, Sungkyun, Kim, Sang-Woo, Kim, Sangsig, Lee, Sang Yeol
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group UK 2019
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6917747/
https://ncbi.nlm.nih.gov/pubmed/31848440
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55807-2
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