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Investigation on energy bandgap states of amorphous SiZnSnO thin films
The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (O(p)). The systematic change in O(p) during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As O(p) i...
Tallennettuna:
| Julkaisussa: | Sci Rep |
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| Päätekijät: | , , , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6917747/ https://ncbi.nlm.nih.gov/pubmed/31848440 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55807-2 |
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