Učitavanje...
Investigation on energy bandgap states of amorphous SiZnSnO thin films
The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (O(p)). The systematic change in O(p) during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As O(p) i...
Spremljeno u:
| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group UK
2019
|
| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6917747/ https://ncbi.nlm.nih.gov/pubmed/31848440 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-55807-2 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|