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Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms c...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5095643/ https://ncbi.nlm.nih.gov/pubmed/27812035 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep36504 |
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