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Nondestructive imaging of atomically thin nanostructures buried in silicon
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Adv |
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| Κύριοι συγγραφείς: | , , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
American Association for the Advancement of Science
2017
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5489266/ https://ncbi.nlm.nih.gov/pubmed/28782006 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.1602586 |
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