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Nondestructive imaging of atomically thin nanostructures buried in silicon
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components...
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| Izdano u: | Sci Adv |
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| Glavni autori: | , , , , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
American Association for the Advancement of Science
2017
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5489266/ https://ncbi.nlm.nih.gov/pubmed/28782006 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.1602586 |
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