Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

[Image: see text] Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these succes...

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Xehetasun bibliografikoak
Argitaratua izan da:ACS Nano
Egile Nagusiak: Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S., Kölker, Alexander, McKenzie, David R., Schofield, Steven R., Curson, Neil J.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: American Chemical Society 2020
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC7146850/
https://ncbi.nlm.nih.gov/pubmed/32142256
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.9b08943
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