Загрузка...
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
[Image: see text] Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these succes...
Сохранить в:
| Опубликовано в: : | ACS Nano |
|---|---|
| Главные авторы: | , , , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
American
Chemical Society
2020
|
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7146850/ https://ncbi.nlm.nih.gov/pubmed/32142256 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.9b08943 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|