Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

[Image: see text] Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these succes...

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Vydáno v:ACS Nano
Hlavní autoři: Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S., Kölker, Alexander, McKenzie, David R., Schofield, Steven R., Curson, Neil J.
Médium: Artigo
Jazyk:Inglês
Vydáno: American Chemical Society 2020
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7146850/
https://ncbi.nlm.nih.gov/pubmed/32142256
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.9b08943
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