The Effects of Annealing Temperatures on Composition and Strain in Si(x)Ge(1−)(x) Obtained by Melting Growth of Electrodeposited Ge on Si (100)

The effects of annealing temperatures on composition and strain in Si(x)Ge(1−)(x), obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show...

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Detaylı Bibliyografya
Yayımlandı:Materials (Basel)
Asıl Yazarlar: Abidin, Mastura Shafinaz Zainal, Morshed, Tahsin, Chikita, Hironori, Kinoshita, Yuki, Muta, Shunpei, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Matsumura, Ryo, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2014
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC5453104/
https://ncbi.nlm.nih.gov/pubmed/28788521
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7021409
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