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Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Molecular Diversity Preservation International (MDPI)
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3231593/ https://ncbi.nlm.nih.gov/pubmed/22163786 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s110303067 |
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