Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crys...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Chang, Tzu-Hsuan, Xiong, Kanglin, Park, Sung Hyun, Yuan, Ge, Ma, Zhenqiang, Han, Jung
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2017
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5527108/
https://ncbi.nlm.nih.gov/pubmed/28743988
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06957-8
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