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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crys...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5527108/ https://ncbi.nlm.nih.gov/pubmed/28743988 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-06957-8 |
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