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Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications
To optimize the thermal design of AlGaN-GaN high-electron-mobility transistors (HEMTs), which incorporate high power densities, an accurate prediction of the underlying thermal transport mechanisms is crucial. Here, a HEMT-structure (Al<sub>0.17</sub>Ga<sub>0.83</sub>N, GaN,...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2020-05-01
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| Colecção: | Energies |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/1996-1073/13/9/2363 |
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