Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...

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Detalhes bibliográficos
Main Authors: Taizoh Sadoh, Mastura Shafinaz Zainal Abidin, Abdul Manaf Hashim, Maneea Eizadi Sharifabad, Shaharin Fadzli Abd Rahman
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2011-03-01
Colecção:Sensors
Assuntos:
AlGaN/GaN
pH sensor
open-gated structure
liquid-pHase
HEMT
Acesso em linha:http://www.mdpi.com/1424-8220/11/3/3067/
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