Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl(4):C(3)H(8)O(2)) electrolyte with constant current of 50 mA for 30 min. The measured...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Abidin, Mastura Shafinaz Zainal, Matsumura, Ryo, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Muta, Shunpei, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2013
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5452791/
https://ncbi.nlm.nih.gov/pubmed/28788375
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma6115047
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