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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were asc...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5319940/ https://ncbi.nlm.nih.gov/pubmed/28235373 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1922-2 |
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