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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were asc...

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Publicat a:Nanoscale Res Lett
Autors principals: Lin, Tao, Kuo, Hao Chung, Jiang, Xiao Dong, Feng, Zhe Chuan
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5319940/
https://ncbi.nlm.nih.gov/pubmed/28235373
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1922-2
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