Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN la...

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Udgivet i:Nanoscale Res Lett
Main Authors: Lin, Tao, Zhou, Zhi Yan, Huang, Yao Min, Yang, Kun, Zhang, Bai Jun, Feng, Zhe Chuan
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2018
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6104412/
https://ncbi.nlm.nih.gov/pubmed/30136130
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2663-6
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