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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5413467/ https://ncbi.nlm.nih.gov/pubmed/28472870 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2109-6 |
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