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Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp(2) and NH(3) precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and...

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Publicat a:Nanoscale Res Lett
Autors principals: Qian, Shi-Bing, Wang, Yong-Ping, Shao, Yan, Liu, Wen-Jun, Ding, Shi-Jin
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5319931/
https://ncbi.nlm.nih.gov/pubmed/28235376
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1925-z
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