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Present status of amorphous In–Ga–Zn–O thin-film transistors

The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs sa...

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Detalhes bibliográficos
Publicado no:Sci Technol Adv Mater
Main Authors: Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo
Formato: Artigo
Idioma:Inglês
Publicado em: Taylor & Francis 2010
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5090337/
https://ncbi.nlm.nih.gov/pubmed/27877346
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/11/4/044305
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