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Present status of amorphous In–Ga–Zn–O thin-film transistors
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs sa...
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| Publicado en: | Sci Technol Adv Mater |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Taylor & Francis
2010
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090337/ https://ncbi.nlm.nih.gov/pubmed/27877346 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/11/4/044305 |
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