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Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was deposited on a typical compositions IGZO layer (IGZO-111). From the op...
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| Main Authors: | , , , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI AG
2020-04-01
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| 叢編: | Materials |
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| 在線閱讀: | https://www.mdpi.com/1996-1944/13/8/1935 |
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