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MOCVD GaInP heterojunction bipolar transistor current gain stability
The evolution of the GaInP/GaAs hetero-junction bipolar transistor currents during the burn-in process is studied. We found that during the burn-in process all the diffusion currents decrease as a function of the stressing time. The simultaneously observed current gain increase is produced by a mo...
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| Publicado en: | Superficies y vacío |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201314 |
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