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Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy
In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. Metrology and process control of three-dimensional (3-D) high-aspect-ratio (HAR) features are becoming increasingly important...
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| Publicado no: | Opt Express |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4986611/ https://ncbi.nlm.nih.gov/pubmed/27464112 |
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