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Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy

In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. Metrology and process control of three-dimensional (3-D) high-aspect-ratio (HAR) features are becoming increasingly important...

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發表在:Opt Express
Main Authors: Attota, Ravi Kiran, Weck, Peter, Kramar, John A., Bunday, Benjamin, Vartanian, Victor
格式: Artigo
語言:Inglês
出版: 2016
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在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC4986611/
https://ncbi.nlm.nih.gov/pubmed/27464112
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