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Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning tra...
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| Publicat a: | Sci Rep |
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| Autors principals: | , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4923855/ https://ncbi.nlm.nih.gov/pubmed/27350322 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28459 |
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