Llwytho...
Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
In this paper, n -type gallium nitride thin films were grown on p -type and n -type silicon substrates by Molecular Beam Epitaxy technique, employing an aluminum nitride layer as an insulator buffer coating. The samples constitute primary semiconductor-insulator-semiconductor or SIS heterostructures...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Revista Mexicana de Física |
|---|---|
| Prif Awduron: | , , , , , |
| Fformat: | Artigo |
| Iaith: | Espanhol |
| Cyhoeddwyd: |
Sociedad Mexicana de Física A.C.
2016
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=57042601009 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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