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Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates

In this paper, n -type gallium nitride thin films were grown on p -type and n -type silicon substrates by Molecular Beam Epitaxy technique, employing an aluminum nitride layer as an insulator buffer coating. The samples constitute primary semiconductor-insulator-semiconductor or SIS heterostructures...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Revista Mexicana de Física
Prif Awduron: J.B. Rojas-Trigos, M. López-López, M.A. Venegas, G.S. Contreras-Puente, D. Jiménez-Olarte, G. Santana-Rodríguez
Fformat: Artigo
Iaith:Espanhol
Cyhoeddwyd: Sociedad Mexicana de Física A.C. 2016
Pynciau:
Mynediad Ar-lein:https://www.redalyc.org/articulo.oa?id=57042601009
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!