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AlN formation by an Al/GaN substitution reaction
Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7400649/ https://ncbi.nlm.nih.gov/pubmed/32747690 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-69992-y |
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