The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxa...

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Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Kuchuk, Andrian V., Kryvyi, Serhii, Lytvyn, Petro M., Li, Shibin, Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Safryuk, Nadiia V., Stanchu, Hryhorii V., Belyaev, Alexander E., Salamo, Gregory J.
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2016
Schlagworte:
Nano Express
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://ncbi.nlm.nih.gov/pubmed/27184965
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1478-6
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