The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxa...

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Bibliografiska uppgifter
I publikationen:Nanoscale Res Lett
Huvudupphovsmän: Kuchuk, Andrian V., Kryvyi, Serhii, Lytvyn, Petro M., Li, Shibin, Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Safryuk, Nadiia V., Stanchu, Hryhorii V., Belyaev, Alexander E., Salamo, Gregory J.
Materialtyp: Artigo
Språk:Inglês
Publicerad: Springer US 2016
Ämnen:
Nano Express
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://ncbi.nlm.nih.gov/pubmed/27184965
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1478-6
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