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Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
We present a comparative study of the strain relaxation of GaN/AlN short-period superlattices (SLs) grown on two different III-nitride substrates introducing different amounts of compensating strain into the films. We grow by plasma-assisted molecular beam epitaxy (0001)-oriented SLs on a GaN buffer...
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| Autori principali: | , , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2012
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3814589/ https://ncbi.nlm.nih.gov/pubmed/22672771 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-289 |
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