Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n(+)/n(0)/n(+)-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the d...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5465006/
https://ncbi.nlm.nih.gov/pubmed/28599511
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2171-0
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