Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n(+)/n(0)/n(+)-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the d...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5465006/
https://ncbi.nlm.nih.gov/pubmed/28599511
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2171-0
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