The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxa...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Kuchuk, Andrian V., Kryvyi, Serhii, Lytvyn, Petro M., Li, Shibin, Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Safryuk, Nadiia V., Stanchu, Hryhorii V., Belyaev, Alexander E., Salamo, Gregory J.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2016
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://ncbi.nlm.nih.gov/pubmed/27184965
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1478-6
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