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Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments
The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074934/ https://ncbi.nlm.nih.gov/pubmed/31979247 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10020197 |
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