A carregar...

Study of Edge and Screw Dislocation Density in GaN/Al(2)O(3) Heterostructure

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al(2)O(3) wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadenin...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Ene, Vladimir Lucian, Dinescu, Doru, Zai, Iulia, Djourelov, Nikolay, Vasile, Bogdan Stefan, Serban, Andreea Bianca, Leca, Victor, Andronescu, Ecaterina
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6947610/
https://ncbi.nlm.nih.gov/pubmed/31847334
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12244205
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!