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Study of Edge and Screw Dislocation Density in GaN/Al(2)O(3) Heterostructure
This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al(2)O(3) wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadenin...
Tallennettuna:
| Julkaisussa: | Materials (Basel) |
|---|---|
| Päätekijät: | , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6947610/ https://ncbi.nlm.nih.gov/pubmed/31847334 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12244205 |
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