The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxa...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Nanoscale Res Lett
Hlavní autoři: Kuchuk, Andrian V., Kryvyi, Serhii, Lytvyn, Petro M., Li, Shibin, Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Safryuk, Nadiia V., Stanchu, Hryhorii V., Belyaev, Alexander E., Salamo, Gregory J.
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer US 2016
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4870488/
https://ncbi.nlm.nih.gov/pubmed/27184965
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1478-6
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky