טוען...
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm(0.1)Bi(0.9)FeO(3) layer as the tunnelling barrier and a semico...
שמור ב:
| הוצא לאור ב: | Nat Commun |
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| Main Authors: | , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2016
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4773477/ https://ncbi.nlm.nih.gov/pubmed/26924259 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10808 |
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