Učitavanje...
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm(0.1)Bi(0.9)FeO(3) layer as the tunnelling barrier and a semico...
Spremljeno u:
| Izdano u: | Nat Commun |
|---|---|
| Glavni autori: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
|
| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4773477/ https://ncbi.nlm.nih.gov/pubmed/26924259 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10808 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|