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MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4593981/ https://ncbi.nlm.nih.gov/pubmed/26437653 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1083-0 |
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