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MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Nanoscale Res Lett
Päätekijät: E, Yanxiong, Hao, Zhibiao, Yu, Jiadong, Wu, Chao, Liu, Runze, Wang, Lai, Xiong, Bing, Wang, Jian, Han, Yanjun, Sun, Changzheng, Luo, Yi
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Springer US 2015
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4593981/
https://ncbi.nlm.nih.gov/pubmed/26437653
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1083-0
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