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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatur...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211884/ https://ncbi.nlm.nih.gov/pubmed/21777417 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-463 |
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