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InAs-mediated growth of vertical InSb nanowires on Si substrates

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Li, Tianfeng, Gao, Lizhen, Lei, Wen, Guo, Lijun, Pan, Huayong, Yang, Tao, Chen, Yonghai, Wang, Zhanguo
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer 2013
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3726463/
https://ncbi.nlm.nih.gov/pubmed/23883403
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-333
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