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InAs-mediated growth of vertical InSb nanowires on Si substrates
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3726463/ https://ncbi.nlm.nih.gov/pubmed/23883403 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-333 |
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