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InAs-mediated growth of vertical InSb nanowires on Si substrates
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...
שמור ב:
| Main Authors: | , , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2013
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3726463/ https://ncbi.nlm.nih.gov/pubmed/23883403 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-333 |
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