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InAs-mediated growth of vertical InSb nanowires on Si substrates

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...

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Autors principals: Li, Tianfeng, Gao, Lizhen, Lei, Wen, Guo, Lijun, Pan, Huayong, Yang, Tao, Chen, Yonghai, Wang, Zhanguo
Format: Artigo
Idioma:Inglês
Publicat: Springer 2013
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3726463/
https://ncbi.nlm.nih.gov/pubmed/23883403
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-333
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