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Statistical characteristics of reset switching in Cu/HfO(2)/Pt resistive switching memory
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductiv...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer-Verlag
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4493841/ https://ncbi.nlm.nih.gov/pubmed/26089007 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-694 |
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