Statistical characteristics of reset switching in Cu/HfO(2)/Pt resistive switching memory

A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductiv...

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Vydáno v:Nanoscale Res Lett
Hlavní autoři: Zhang, Meiyun, Long, Shibing, Wang, Guoming, Liu, Ruoyu, Xu, Xiaoxin, Li, Yang, Xu, Dinlin, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer-Verlag 2014
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4493841/
https://ncbi.nlm.nih.gov/pubmed/26089007
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-694
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