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Direct growth of freestanding GaN on C-face SiC by HVPE
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2015
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4451798/ https://ncbi.nlm.nih.gov/pubmed/26034939 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10748 |
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